1 of 1 smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SA1978 features high ft (ft=5.5ghz typ). high gain |s 21e | 2 =10.0db typ.@f=1.0ghz,vce=-10v,ic=-15ma high-speed switching characterstics absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -20 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -3.0 v collector current i c -50 ma total power dissipation p t 200 mw junction temperature t j 150 storage temperature t stg -65to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -10v -10 a emitter cutoff current i ebo v eb =-2v -10 a dc current gain h fe v ce =-10v,ic=-15ma 20 40 100 gain bandwidth product f t v ce = -10v ,ic=-15ma 4.0 5.5 ghz collector capacitance c re *v cb = -10v , i e = 0 , f = 1mhz 0.5 1 pf insertion power gain |s 21e |2 vce=-10v,ic=-15ma,.f=1.0ghz 8.0 10.0 db noise figure nf vce=-10v,ic=-3ma,.f=1ghz 2.0 3 db *.mesured by a 3-terminal bridge. emitter and case should be connected to the guard terminal. h fe classification marking t93 rank fb hfe 20 100 sales@twtysemi.com http://www.twtysemi.com smd type diodes smd type transistors smd type ic smd type smd type smd type ic smd type smd type ic smd type smd type smd type smd type ic smd type product specification 4008-318-123
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